[논문]
이상훈, 권세훈, 노원태, 서승기, 이우재, 오일권, 김형준,
Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides,
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
pp. 062402-062410
(10월, 2023)
[논문]
Asir Intisar Khan, Eric Pop, H.-S. Phillip Wong, Shenjun Qin, Stacey F. Bent, 이유진, 오일권,
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices,
ACS Applied Materials & Interfaces,
pp. 43087-43093
(9월, 2023)
[논문]
Hayrensa Ablat, 오일권, Nathaniel E. Richey, Solomon T. Oyakhire, Wenbo Zhang, William Huang, Yi Cui, Yufei Yang, Stacey F. Bent,
Molecular Layer Deposition of Organic−Inorganic Hafnium Oxynitride Hybrid Films for Electrochemical Applications,
ACS Applied Energy Materials,
pp. 5806-5816
(5월, 2023)
[논문]
김강식, 김우희, 김형준, 이유진, 이종훈, 이한보람, 이홍섭, 오일권,
Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films,
CHEMISTRY OF MATERIALS,
pp. 2312-2320
(3월, 2023)
[논문]
최애림, 김도희, 김세연, 류승욱, 서승기, 이우재, 오일권,
Reaction mechanism and film properties of the atomic layer deposition ofZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor,
APPLIED SURFACE SCIENCE,
pp. 157104-157112
(1월, 2023)
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[논문]
이상훈, 권세훈, 노원태, 서승기, 이우재, 오일권, 김형준,
Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides,
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
pp. 062402-062410
(10월, 2023)
[논문]
Asir Intisar Khan, Eric Pop, H.-S. Phillip Wong, Shenjun Qin, Stacey F. Bent, 이유진, 오일권,
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices,
ACS Applied Materials & Interfaces,
pp. 43087-43093
(9월, 2023)
[논문]
Hayrensa Ablat, 오일권, Nathaniel E. Richey, Solomon T. Oyakhire, Wenbo Zhang, William Huang, Yi Cui, Yufei Yang, Stacey F. Bent,
Molecular Layer Deposition of Organic−Inorganic Hafnium Oxynitride Hybrid Films for Electrochemical Applications,
ACS Applied Energy Materials,
pp. 5806-5816
(5월, 2023)
[논문]
김강식, 김우희, 김형준, 이유진, 이종훈, 이한보람, 이홍섭, 오일권,
Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films,
CHEMISTRY OF MATERIALS,
pp. 2312-2320
(3월, 2023)
[논문]
최애림, 김도희, 김세연, 류승욱, 서승기, 이우재, 오일권,
Reaction mechanism and film properties of the atomic layer deposition ofZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor,
APPLIED SURFACE SCIENCE,
pp. 157104-157112
(1월, 2023)
[논문]
Asir Intisar Khan, 오일권, 원병준, Christopher Perez, H-S Philip Wong, Heungdong Kwon, Kangsik Kim, Kenneth E Goodson, Krishna Saraswat, Maryann C Tung, Mehdi Asheghi, Pranav Ramesh, Xiangjin Wu, Zonghoon Lee, Eric Pop,
Unveiling the effect of superlattice interfaces and intermixing on phase change memory performance,
NANO LETTERS,
pp. 6285-6291
(7월, 2022)
[논문]
Asir Intisar Khan, 오일권, 원병준, Christopher Perez, H.-S. Philip Wong, Kathryn M. Neilson, Kenneth E. Goodson, Krishna Saraswat, Mehdi Asheghi, Pranav Ramesh, Xiangjin Wu, 권흥동, 김강식, 이종훈, Eric Pop,
First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory withLow Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105ºC),
Digest of Technical Papers - Symposium on VLSI Technology,
pp. 310-311
(6월, 2022)
[논문]
오일권, Chi Thang Nguyen, Nathaniel E. Richey, Ralf Tonner, Stacey Bent, Tania E. Sandoval, Tzu-Ling Liu, 구본욱, 이한보람,
Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3–x and Al(CyH2y+1)3 Precursors,
Journal of the American Chemical Society,
pp. 11757-11766
(6월, 2022)
[논문]
Josiah Yarbrough, 오일권, Daniel Grigianis, Fabian Pieck, Patrick Maue, Ralf Tonner, Stacey Bent,
Tuning Molecular Inhibitors and Aluminum Precursors for the Area-Selective Atomic Layer Deposition of Al2O3,
CHEMISTRY OF MATERIALS,
pp. 4646-4659
(5월, 2022)
[논문]
이유진, 오일권, 김형준, 남태욱, 서승기, 서진형, 석장현, 선상규, 송봉근, 윤휘, 이상훈, 이현호,
Growth mechanism and electrical properties of tungsten films deposited byplasma-enhanced atomic layer deposition with chloride and metalorganic precursors,
APPLIED SURFACE SCIENCE,
pp. 150939-150945
(8월, 2021)
[논문]
우황제, 오일권, 김미소, 김형준, 서승기, 송봉근, 윤휘, 이유진, 정승민,
Reaction Mechanisms of Non-hydrolytic Atomic Layer Deposition ofAl2O3 with a Series of Alcohol Oxidants,
JOURNAL OF PHYSICAL CHEMISTRY C,
pp. 18151-18160
(8월, 2021)
[논문]
이우재, 오일권, Susanta Bera, 배종성, 안정원, 우현재, 권세훈,
Controllable size and crystallinity of Runanoparticles on a carbon support synthesized byfluidized bed reactor-atomic layer deposition forenhanced hydrogen oxidation activity,
JOURNAL OF MATERIALS CHEMISTRY C,
pp. 17223-17230
(6월, 2021)
[논문]
오일권, Nathaniel E. Richey,, Stacey F. Bent, Tania E. Sandoval, Tzu-Ling Liu,,
Role of Precursor Choice on Area-Selective Atomic Layer Deposition,
CHEMISTRY OF MATERIALS,
pp. 3926-3935
(5월, 2021)
[논문]
Houda Gaiji, Rizwan Khan, Sumaira Yasmeen, 문찬휘, 신상우, 윤재홍, 이한보람, 오일권,
Self-Formation of Superhydrophobic Surfaces through InterfacialEnergy Engineering between Liquids and Particles,
LANGMUIR,
pp. 5356-5363
(4월, 2021)
[논문]
이유진, 오일권, 김현재, 김형준, 김호진, 남태욱, 서승기, 양준영, 유충근, 유혁준, 윤휘, 이청훤, 임성일, 최동욱, 최원준,
Hydrogen Barriers Based on Chemical Trapping Using ChemicallyModulated Al2O3 Grown by Atomic Layer Deposition for InGaZnOThin-Film Transistors,
ACS APPLIED MATERIALS & INTERFACES,
pp. 20349-20360
(4월, 2021)
[논문]
Xiaoyun Yu, 오일권, Dara Semple, Richard G Closser, Stacey Bent, Tzu-Ling Liu, William Trevillyan,
Area-Selective Molecular Layer Deposition of a Silicon Oxycarbide Low-k Dielectric,
CHEMISTRY OF MATERIALS,
pp. 902-909
(2월, 2021)
해당 데이터는 존재하지 않습니다.
[학술회의]
오일권, 김형근,
Improved Leakage Currents of ALD ZrO2 by Controlling Surface Reaction with Plasma Source,
AVS Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2022),
(12월, 2022)
[학술회의]
이민정, 오일권, 임동현,
Study on the Reduction of Leakage Currents for Atomic Layer Deposition HfO2 Thin Films,
KISM 2022,
(11월, 2022)
[학술회의]
오일권,
Study on Area-Selective Atomic Layer Deposition of Al2O3 with a Series of Al Precursors,,
AVS 22nd International Conference on Atomic Layer Deposition (ALD 2022),
(6월, 2022)
[학술회의]
오일권,
Selective Pattern Fabrication by AS-ALD for Semiconductor Devices,
International Union of Materials Research Societies - International Conference in Asia 2021,
(10월, 2021)
[학술회의]
오일권,
Reaction Mechanism of Area-Selective Deposition for Advanced Device Fabrication,
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices,
(8월, 2021)
[학술회의]
오근하, 오일권,
Bi-layered ZrO2/Y2O3 Structure for Ge-Based Devices Grown by Atomic LayerDeposition,
반도체학술대회,
(1월, 2022)
[학술회의]
원병준, 오일권, 오근하,
The Effect of Al2O3 Passivation Layer between ZrO2/Ge Substrate Depending onAnnealing Temperature,
반도체학술대회,
(1월, 2022)
[학술회의]
오일권,
Fundamentals of Bottom-up Fabrication of Selective Patterns forSemiconductor Devices,
반도체학술대회,
(1월, 2022)
[학술회의]
오일권, 황진석,
The Effect of Post-depositing Annealing on the Electrical PropertiesZrO2/Al2O3/ZrO2 Thin Films,
반도체학술대회,
(1월, 2022)
[학술회의]
송채영, 오일권, 최애림,
Area-Selective Atomic Layer Deposition of HfO2 for RRAM Device Fabrication,
반도체학술대회,
(1월, 2022)
[학술회의]
오일권,
선택적 영역 원자층 증착법을 위한 표면반응 메커니즘: Al2O3 case 연구,
Korean Surface Engineering conference,
(6월, 2021)