[2016.09 ~ 2020.02] SK Hynix DRAM 개발
[2020.03 ~ 2023.02] 부경대학교 전기공학부
대표논문
[논문]
안도균, 김가람, 김현우, 김장현, 김상완,
Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation,
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
pp. 015006-015006
(12월, 2023)
[논문]
김장현, 김현우,
Demonstration of a Frequency Doubler Using a TunnelField-Effect Transistor with Dual Pocket Doping,
Electronics,
pp. 4932-4932
(12월, 2023)
[논문]
고민기, 김장현, 김가람,
Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations,
Journal of Semiconductor Technology and Science,
pp. 228-235
(8월, 2023)
[논문]
윤채원, 김장현, 김상완, 김현우, 조성재, 조일환, 김가람,
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction,
Journal of Semiconductor Technology and Science,
pp. 207-214
(8월, 2023)
[논문]
주동열, 김장현, 김성준,
Highly uniform resistive switching characteristics of Ti/TaOx/ITOmemristor devices for neuromorphic system,
Journal of Alloys and Compounds,
pp. 170920-170920
(6월, 2023)
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[논문]
안도균, 김가람, 김현우, 김장현, 김상완,
Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation,
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
pp. 015006-015006
(12월, 2023)
[논문]
김장현, 김현우,
Demonstration of a Frequency Doubler Using a TunnelField-Effect Transistor with Dual Pocket Doping,
Electronics,
pp. 4932-4932
(12월, 2023)
[논문]
윤채원, 김장현, 김상완, 김현우, 조성재, 조일환, 김가람,
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction,
Journal of Semiconductor Technology and Science,
pp. 207-214
(8월, 2023)
[논문]
고민기, 김장현, 김가람,
Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations,
Journal of Semiconductor Technology and Science,
pp. 228-235
(8월, 2023)
[논문]
주동열, 김장현, 김성준,
Highly uniform resistive switching characteristics of Ti/TaOx/ITOmemristor devices for neuromorphic system,
Journal of Alloys and Compounds,
pp. 170920-170920
(6월, 2023)
[논문]
김기영, 황태현, 송영서, 김장현, 김현우,
Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT,
Micromachines,
pp. 474-474
(1월, 2023)
[논문]
박동규, 김장현, 김현우,
Improvement Breakdown Voltage by a Using Crown-Shaped Gate,
Electronics,
pp. 474-4
(1월, 2023)
[논문]
송영서, 김장현, 김가람, 김상완, 이종호, 최우영,
Enhancement of Thermal Characteristics and On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-κ Spacer Structure,
IEEE TRANSACTIONS ON ELECTRON DEVICES,
pp. 343-348
(12월, 2022)
[논문]
송영서, 강석중, 김상완, 김가람, 김기영, 윤태영, 김장현,
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design,
SOLID-STATE ELECTRONICS,
pp. 108436-108436
(11월, 2022)
[논문]
김상완, 김기영, 김가람, 송영서, 김장현,
Reliable High-Voltage Drain-Extended FinFET with Thermoelectric Improvement,
IEEE TRANSACTIONS ON ELECTRON DEVICES,
pp. 5985-5995
(10월, 2022)
[논문]
이강, 김상완, 김장현, 김가람,
Research of Quantized Current Effect with Work Function Variation in Tunnel-field Effect Transistor,
Journal of Semiconductor Technology and Science,
pp. 266-274
(8월, 2022)
[논문]
김가람, 김상완, 김장현,
Multi-colour GaN-based LEDs with trenchstructure,
JAPANESE JOURNAL OF APPLIED PHYSICS,
pp. 050904-050904
(5월, 2022)
[논문]
김현우, 김장현, 곽빈, 권대웅,
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor,
IEEE TRANSACTIONS ON ELECTRON DEVICES,
pp. 4046-4049
(5월, 2022)
[논문]
윤태영, 김장현,
Application of SiGe layer for reinforcing conductivity modulation in trench insulated gate bipolar transistor,
JAPANESE JOURNAL OF APPLIED PHYSICS,
pp. 051001-1-051001-6
(4월, 2022)
[논문]
전민규, 김상완, 이강, 김장현, 김가람,
Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier,
Journal of Semiconductor Technology and Science,
pp. 61-68
(4월, 2022)
[논문]
김현우, 김장현, 권대웅,
Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor,
Journal of Semiconductor Technology and Science,
pp. 24-29
(2월, 2022)
[논문]
강석중, 고승원, 김장현, 김상완,
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact,
IEEE TRANSACTIONS ON ELECTRON DEVICES,
pp. 910-914
(1월, 2022)
[논문]
김기영, 노주석, 윤태영, 김장현,
Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers,
Micromachines,
pp. 1422-1422
(11월, 2021)
[논문]
송영서, 김상완, 김가람, 김현우, 이종호, 김장현, 박병국,
Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design,
JAPANESE JOURNAL OF APPLIED PHYSICS,
pp. SCCE04-SCCE04
(3월, 2021)
[논문]
김현우, 김장현,
Study on the Influence of Drain Voltage on Work Function Variation Characteristics in Tunnel Field-effect Transistor,
Journal of Semiconductor Technology and Science,
pp. 558-564
(12월, 2020)
[논문]
김장현, 송영서, 김가람, 김현민, 김상완, 박병국,
Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs,
IEEE Journal of the Electron Devices Society,
pp. 36-41
(11월, 2020)
[논문]
김장현, 김태찬, 김가람, 김현우, 김상완,
Methodology to investigate impact of grain orientation on threshold voltage and current variability in tunneling field-effect transistors,
IEEE Journal of the Electron Devices Society,
pp. 1345-1349
(10월, 2020)
[논문]
김가람, 김장현, 김상완,
Optimization of spacer and source/channel junction to improve TFET characteristics,
IEICE Electronics Express,
pp. 20200211-20200211
(9월, 2020)
[논문]
김장현, 김현우, 송영서, 김상완, 김가람,
Analysis of current variation with work function variation in l-shaped tunnel-field effect transistor,
Micromachines,
pp. 780-780
(8월, 2020)
[논문]
김가람, 김장현, 김재민, 김상완,
Analysis of Work-Function Variation Effects in aTunnel Field-Effect Transistor Depending on theDevice Structure,
Applied Sciences-Basel,
pp. 5378-5378
(8월, 2020)
[논문]
이승현, 박정욱, 지동우, 김가람, 김상완, 김장현,
Rigorous study on hump phenomena in surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET),
Applied Sciences-Basel,
pp. 3596-3596
(5월, 2020)
[논문]
김장현, 김상완,
Study on the nonlinear output characteristic of tunnel field-effect transistor,
Journal of Semiconductor Technology and Science,
pp. 158-162
(4월, 2020)
[논문]
김장현, 신성수, 이민규, 김상완,
Investigation of Line-edge Roughness Effects on Electrical Characteristics of Nanowire Tunnel FETs and MOSFETs,
Journal of Semiconductor Technology and Science,
pp. 41-46
(2월, 2020)